, (i nc.. 20 stern ave. springfield, new jersey 07081 u.s.a. irf322, IRF323 2.8a and 3.3a, 350v and 400v, 1.8 and 2.5 ohm, n-channel power mosfets elephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 features ? 2.8a and 3.3a, 350v and 400v ' rds(on) = 1.8iiand2.5ii ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? majority carrier device description these are n-channel enhancement mode silicon gate power field effect transistors. they are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching conver- ters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. ordering information note: when ordering, use the entire part number. symbol od part number irf320 irf321 irf322 IRF323 package to-204aa to-204aa to-204aa to-204aa brand irf320 irf321 irf322 IRF323 packaging drain (flange) jedec to-204aa gate (pin 1) source (pin 2) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
absolute maximum ratings tc = 25c, unless othe drain to source breakdown voltage (note 1) vnc> drain to gate voltage (rgs = 20kq) (note 1 ) continuous drain current tc= 100c pulsed drain current (note 3) gate to source voltage maximum power dissipation linear derating factor single pulse avalanche energy rating (note 4) operating and storage temperature . . . maximum temperature for soldering leads at 0.063in (1 .6mm) from case for 1 0s packaae bodv for 10s. see tb334 ln in . . . .vrq pn ea<; ti tnlen rwise specified irf320 400 400 3.3 2.1 13 20 50 0.4 190 -55 to 150 300 260 irf321 350 350 3.3 2.1 13 20 50 0.4 190 -55to150 300 260 irf322 400 400 2.8 1.8 11 20 50 0.4 190 -55 to 150 300 260 IRF323 350 350 2.8 1.8 11 20 50 0.4 190 -55 to 150 300 260 units v v a a a v w w/c mj c c c caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: = 25cto 125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage irf320, irf322 irf321, IRF323 gate to threshold voltage zero gate voltage drain current on-state drain current (note 2) irf320, irf321 irf322, IRF323 gate to source leakage current drain to source on resistance (note 2) irf320, irf321 irf322, IRF323 forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge symbol bvdss vgs(th) bss !d(on) 'gss rds(on) sfs 'd(on) tr ld(off) tf qg(tot) qgs qgd test conditions id = 250ua vgs = 0v, (figure 10) vgs = vds. id = 250na vds = rated bvdss, vgs = 0v vds = 0.8 x rated bvdss, vgs = 0v tj = 125c vds " id irf320, irf321, irf322, IRF323 electrical specifications tc = 25c, unless otherwise specified (continued) parameter input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol ciss coss crss ld ls rbjc r9ja test conditions vds = 25v, vgs = 0v, f = 1mhz (figure 11) measured between the contact screw on the flange that is closer to source and gate pins and the center of die measured from the source lead, 6mm (0.25in) from the flange and the source bonding pad modified mosfet symbol showing the internal devices inductances free air operation min - - - - - typ 450 100 20 5.0 12.5 - - max - - - 2.5 30 units pf pf pf nh nh c/w c/w source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage (note 2) reverse recovery time reverse recovery charge symbol !sd 'sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction diode *jj < >d ?) s tc = 25c, isd = 3.3a, vgs = 0v, (figure 13) tj = 25c, isd = 3.3a, dlsd/dt = 100a/us tj = 25c, isd = 3.3a, dlsd/dt = 100a/us min - - 120 0.64 typ - - 270 1.4 max 3.3 13 1.8 600 3.0 units a a v ns nc notes: 2. pulse test: pulse width < 300^3, duty cycle < 2%.
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